JPH0473627B2 - - Google Patents

Info

Publication number
JPH0473627B2
JPH0473627B2 JP60500186A JP50018685A JPH0473627B2 JP H0473627 B2 JPH0473627 B2 JP H0473627B2 JP 60500186 A JP60500186 A JP 60500186A JP 50018685 A JP50018685 A JP 50018685A JP H0473627 B2 JPH0473627 B2 JP H0473627B2
Authority
JP
Japan
Prior art keywords
layer
resistive
electrodes
semiconductor
resistive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60500186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61500996A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS61500996A publication Critical patent/JPS61500996A/ja
Publication of JPH0473627B2 publication Critical patent/JPH0473627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905—Plural dram cells share common contact or common trench

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP60500186A 1983-12-30 1984-12-18 抵抗性電界シ−ルドを有する半導体構造 Granted JPS61500996A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US567370 1983-12-30
US06/567,370 US4580156A (en) 1983-12-30 1983-12-30 Structured resistive field shields for low-leakage high voltage devices

Publications (2)

Publication Number Publication Date
JPS61500996A JPS61500996A (ja) 1986-05-15
JPH0473627B2 true JPH0473627B2 (en]) 1992-11-24

Family

ID=24266873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60500186A Granted JPS61500996A (ja) 1983-12-30 1984-12-18 抵抗性電界シ−ルドを有する半導体構造

Country Status (6)

Country Link
US (1) US4580156A (en])
EP (1) EP0168432B1 (en])
JP (1) JPS61500996A (en])
CA (1) CA1227581A (en])
DE (1) DE3480310D1 (en])
WO (1) WO1985003167A1 (en])

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
JPS63194361A (ja) * 1987-02-09 1988-08-11 Toshiba Corp 高耐圧プレ−ナ型半導体素子
USH665H (en) * 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices
JPH021928A (ja) * 1988-06-10 1990-01-08 Toshiba Corp 半導体集積回路
US5192716A (en) * 1989-01-25 1993-03-09 Polylithics, Inc. Method of making a extended integration semiconductor structure
US5055907A (en) * 1989-01-25 1991-10-08 Mosaic, Inc. Extended integration semiconductor structure with wiring layers
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5192707A (en) * 1991-07-31 1993-03-09 Sgs-Thomson Microelectronics, Inc. Method of forming isolated regions of oxide
US5231301A (en) * 1991-10-02 1993-07-27 Lucas Novasensor Semiconductor sensor with piezoresistors and improved electrostatic structures
JP3207615B2 (ja) * 1992-06-24 2001-09-10 株式会社東芝 半導体装置
JP2850694B2 (ja) * 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置
GB2330452A (en) * 1997-10-16 1999-04-21 Plessey Semiconductors Ltd Arrangement for inhibiting dielectric polarisation in high voltage devices
EP1063700B1 (de) * 1999-06-22 2012-07-25 Infineon Technologies AG Substrat für Hochspannungsmodule
US6169624B1 (en) * 1999-08-11 2001-01-02 Asif A. Godil Achromatic optical modulators
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
JP5708124B2 (ja) * 2011-03-25 2015-04-30 三菱電機株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
GB1251456A (en]) * 1969-06-12 1971-10-27
US3728590A (en) * 1971-04-21 1973-04-17 Fairchild Camera Instr Co Charge coupled devices with continuous resistor electrode
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US3906539A (en) * 1971-09-22 1975-09-16 Philips Corp Capacitance diode having a large capacitance ratio
US3890698A (en) * 1971-11-01 1975-06-24 Motorola Inc Field shaping layer for high voltage semiconductors
US3766448A (en) * 1972-02-04 1973-10-16 Gen Instrument Corp Integrated igfet circuits with increased inversion voltage under metallization runs
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
FR2294314A1 (fr) * 1974-12-11 1976-07-09 Saint Gobain Intercalaire pour vitrages multiples
FR2348579A1 (fr) * 1976-04-12 1977-11-10 Radiotechnique Compelec Dispositif du type p-i-n et ensemble comportant le dispositif precite
US4297149A (en) * 1980-05-05 1981-10-27 Rca Corporation Method of treating SiPOS passivated high voltage semiconductor device

Also Published As

Publication number Publication date
CA1227581A (en) 1987-09-29
EP0168432B1 (en) 1989-10-25
WO1985003167A1 (en) 1985-07-18
JPS61500996A (ja) 1986-05-15
DE3480310D1 (en) 1989-11-30
US4580156A (en) 1986-04-01
EP0168432A1 (en) 1986-01-22

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